个人简介

个人概况： 姓名：黄海华 职称：讲师 最后学历：研究生 最后学位：博士 毕业院校：吉林大学 专业：材料物理与化学 研究方向：第一性原理计算 Email: huanghaihua@lcu.edu.cn

 

学习及工作经历：

 

2020.07至今	聊城大学云顶yd2223线路检测	讲师
2016.09-2020.06	吉林大学，博士	材料物理与化学
2013.09-2016.06	吉林大学，硕士	材料物理与化学
2009.09-2013.06	烟台大学，学士	材料科学与工程

 

研究领域和兴趣：

 

储能材料、热电材料的计算机模拟

主讲课程 ：

本科生课程：《材料工程基础》

代表性成果：（论文及专利等）

(1) H. H. Huang; Xiaofeng Fan^*; W. T. Zheng; David J. Singh, Improved thermoelectric transport properties of Ge₄Se₃Te through dimensionality reduction, Journal of Materials Chemistry C, 2021, 9(5), 1804-1813.

(2) H. H. Huang; Xiaofeng Fan^*; David J. Singh; W. T. Zheng, Thermoelectric properties of monolayer GeAsSe and SnSbTe, Journal of Materials Chemistry C, 2020, 8(28), 9763-9774. 

(3) Haihua Huang; Kaining Li; Xiaofeng Fan^*; David J. Singh; W. T. Zheng, Storage of Na in layered graphdiyne as high capacity anode materials for sodium ion batteries, Journal of Materials Chemistry A, 2019, 7(44), 25609-25618.

(4) H. H. Huang; Xiaofeng Fan^*; David J. Singh; W. T. Zheng, The thermal and thermoelectric transport properties of SiSb, GeSb and SnSb monolayers, Journal of Materials Chemistry C, 2019, 7(34), 10652-10662.

(5) H. H. Huang; Guangzong Xing; Xiaofeng Fan^*; David J. Singh; W. T. Zheng, Layered Tl₂O: a model thermoelectric material, Journal of Materials Chemistry C, 2019, 7(17), 5094-5103.

(6) H. H. Huang; Xiaofeng Fan^*; David J. Singh; W. T. Zheng^*, First principles study on 2H–1T’ transition in MoS₂ with copper, Physical Chemistry Chemical Physics, 2018, 20(42), 26986-26994.

(7) H. H. Huang; Xiaofeng Fan^*; David J. Singh; Hong Chen; Q. Jiang; W. T. Zheng^*, Controlling phase transition for single-layer MTe₂ (M = Mo and W): modulation of the potential barrier under strain, Physical Chemistry Chemical Physics, 2016, 18(5), 4086-4094.

(8) H. H. Huang; Xiaofeng Fan^*; David J. Singh; W. T. Zheng^*, Recent progress of TMD nanomaterials: phase transitions and applications, Nanoscale, 2020, 12(3), 1247-1268.

(9) H.H.Huang; XiaofengFan^*; G.M.Yang; David J. Singh; W. T. Zheng, DFT calculation for stability and strength of iron borides, Computational Materials Science, 2018, 144, 147-153.

(10) H H Huang; Xiaofeng Fan^*; C Q Hu; David J Singh; Q Jiang; W T Zheng^*, Transformation of electronic properties and structural phase transition from HfN to Hf₃N₄, Journal of Physics: Condensed Matter, 2015, 27(22), 225501.